The International Venture for Nanolithography (INVENT) initiative is a first-of-its-kind, global industry-university consortium for research and development, education and technology deployment for future generations of nanolithography applications at the College of Nanoscale Science and Engineering.
This new, highly synergistic approach will accelerate product development and quicken the time to market, making New York’s statewide high-tech economy more competitive than ever. The new initiative will also establish CNSE as the premier institution of higher education in the field of nanotechnology and as a national leader in industry-university alliances for training the high-tech work force of the 21st century.
More than $600 million in total public/private sector funds have been committed to INVENT’s development. The state’s commitment to INVENT, led by Assembly Speaker Sheldon Silver and members of the Capital Region’s Assembly delegation, was demonstrated by a $75 million allocation for the UAlbany facility that was contained in the state budget, building on the Assembly’s prior commitments to CNSE's Albany NanoTech complex of more than $30 million.
Private-industry partners for the new INVENT model, which vertically integrates the technical capabilities and financial resources of leading computer-chip manufacturers, include Advanced Micro Devices (AMD), ASML, Qimonda, International Business Machines (IBM) and Micron Technology, with the state-of-the-art facilities at CNSE affording the companies access to the largest, most leveraged, private partnership to develop and deploy nanolithography solutions.
INVENT program extreme ultraviolet lithography (EUVL) plans:
Resists
Goal: Develop resist process for <=32nm node
Approach: Screening & characterization of promising commercial resists on AD-10
Reticles
Goal: Understand defect issues and lifetime under storage & exposure conditions
Approach: Establish methodologies for reticle cleans and metrology with suppliers
Process
Goal: Assess EUVL process technology including RET & tool performance on imaging & overlay
Approach: Integrate EUVL tool in process flow
Tool
Goal: Determine EUVL α-tool performance and reliability
Approach: Work closely with ASML to meet INVENT member-specified tool performance
Selected INVENT papers and presentations:
INVENT EUV lithography program update (PDF)
2007 International EUVL Symposium - October 28-31, 2007
Initial experience establishing an EUV baseline lithography process for manufacturability assessment (PDF)
Emerging Lithographic Technologies XI, Proc. of SPIE Vol. 6517, 6517OU-1, (2007)
Are EUV Resists Ready for the 32nm Mode? (PDF)
51st EIPBN (Electron, Ion, and Photon Beam Technology and Nanofabrication) Conference - May 29-June 1, 2007
Trends in the Cost of Photolithography Development and an Outlook for the Future (PDF) Abstract (Word)
Infineon Development at Albany
2005 International Symposium on Extreme Ultraviolet Lithography - November 7, 2005
Imaging with Immersion Technology at Albany NanoTech (PDF)
September 12, 2005
A Year in the Life of an Immersion Lithography Alpha Tool (PDF) Manuscript (Word)
International Symposium on Immersion Lithography - September 2005
Prospects & challenges of defectivity in water immersion lithography (PDF)
International Symposium on Immersion Lithography - September 2005
Top Coat Compatibility Studies (PDF) Abstract (Word)
International Symposium on Immersion Lithography - September 2005
Measuring Resist-Topcoat Compatibility Using Ellipsometry (PDF)
International Symposium on Immersion Lithography - September 2005
Immersion Defect Studies on the 1150i α-Tool (PDF) Abstract (Word)
International Symposium on Immersion Lithography - September 2005
Immersion Lithography Water Quality Learning at Albany (PDF)
International Symposium on Immersion Lithography - September 2005
193nm Immersion Material Top Coat Acid and Resist Photo Acid Generator Interaction (PDF)
International Symposium on Immersion Lithography - September 2005
Brewer Science DUV30J as a Universal BARC for 157nm Resist Evaluation (PDF)
