World-Class Resources > Metrology Labs > Analytical & Characterization Techniques > IonTof V-300 TOF-SIMS

• Latest generation TOF-SIMS
• Bi analysis beam 250nm resolution
• Bi, Bi3 or Bi3++
• Cs or O sputtering beam to 2keV - 250eV
• Full 300mm wafer capability

Typical applications: surface contamination analysis; depth profiling dopants and impurities; surface and 3D ion imaging

IonTof-V Imaging Data

IonTof-V Depth Profile Data