World-Class Resources

Skip Navigation LinksWorld-Class Resources > Metrology Labs > Analytical & Characterization Techniques > Bruker D8 DISCOVER High Resolution X-ray Diffractometer > Sample Data
Sample Data
Whole-pattern fit (Bruker TOPAS) yielded an average crystal size of 10.2 nm for Au nano- crystals imbedded in yttria-stabilized zirconia (YSZ)

High resolution X-ray diffraction of 10 period Si:C/Si superlattice

Effect of strain relaxation in GexSi1-x/GaAs
  • The generation of misfit dislocations during strain relaxation broaden the rocking curve
  • GexSi1-x layers grown on GaAs shows pseudomorphic growth at low Si content and relaxed growth at high Si
  • Note broadening of rocking curve FWHM + elimination of interference fringes
  • Misfit dislocations disrupt the dynamic coupling of X-ray wavefields

Triple axis diffraction analysis of GexSi1-x/GaAs




Note the change in the scatter about the substrate peak (red arrow) as defects are “injected” into the substrate