World-Class Resources > CNSE Wafer Processing Research & Development > Wets > FEOL Wets Processes

• HFEG
• Dilute SC1 / SC2. RT and hot (60C)
• Concentrated SC1 @RT and hot
• Hot Phosphoric 
• Dilute Nitric 
• HF (300:1 DHF/100:1 DHF/10:1 DHF. Etch rate, respectively: 7/28/600 A/min) 
• Ozone/HCl 
• Piranha 
• Backside Clean (SC1 or SC2 or dilute nitric followed by DHF) 
• Brush Clean 
• 40:1 BHF
• Aqua Regia
• HF-Last
• Hot Ammonia for a-Si etch

TEMPLE ETCH