World-Class Resources > CNSE Wafer Processing Research & Development > Mask Sets > Integrated Non-Planar FinFET
Integrated Non-Planar FinFET
- SOI Starting Substrate
- 20nm Fin Width
- 15nm Fins achievable with smoothing
- High-k / MG - Ideal test vehicle for evaluating new gate materials on non planar devices
- 40nm a-Si Gates
- Nitride Spacer
- Nickel Silicide
- Cu Pad Contacts
- Testable Structures @ M1 and PSP
- Slot and Pad Contacts