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Lithography and Patterning Tools
Warren Montgomery

"CNSE has a long history
of working collaboratively
with many of the largest
semiconductor companies.
We, at CNSE, pride
ourselves on delivering
valued added high
resolution lithographic
capability. The partnerships
CNSE has developed with
resist companies equipment
companies, and IC
manufactures positions
CNSE uniquely. We look
forward to the opportunity
to work with you."

Warren Montgomery,
Assistant Vice President
for Business Development

The tools listed below can be used to process 300mm wafers to 32nm process node and below:

ASML 300mm ADT EUV
ASML 1950i 193nm ‘"immersion" tool capable of 22nm imaging
ASML 1700i 193nm "immersion" tool capable of 50nm imaging
ASML 1200b 193nm ‘dry' tool capable of 80nm imaging
200mm EUV

Sample Geometries

Min Trench CD: 48nm
Min Trench Pitch: 1:1
Max Trench AR: 4

Min Via CD: 50nm/48nm
Min Via Pitch: Isolated
Max Via AR: TBD start w/ 5

Min Gate CD: Sub 32nm
Min Gate Pitch: 1:3
Max Gate AR 30