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CMP Processes
CMP Processes
FEOL Applications
STI
Our POR STI process has two steps. The first is a bulk oxide removal using silica slurry which is endpointed; resulting in a repeatable active oxide thickness going into the second step. The second step uses fixed abrasive to meet the rigorous dishing requirements for advanced node STI step heights.
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Cu / liner
PMD / IMD
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TiN
Poly for FINFET
Poly-Open-Polish for Replacement Gate
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