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SIMS

Capabilities:

  • 300mm full wafer handling
  • Static mode:  measurement of organic molecules on surfaces
  • Dynamic mode: Depth profiling  
  • Ion imaging mode:  lateral resolution as low as 250nm

Typical applications:

  • Measurement of dopant profiles in Si and compound semiconductors
  • Measurement of impurities in semiconductor films, metal films 
  • Measurement of inorganic and organic surface contaminants 
  • Mapping impurity distributions in deposited metals

Typical data: