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CNSE Wafer Processing Research & Development
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Analytical Services
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SIMS
SIMS
Capabilities:
300mm full wafer handling
Static mode: measurement of organic molecules on surfaces
Dynamic mode: Depth profiling
Ion imaging mode: lateral resolution as low as 250nm
Typical applications:
Measurement of dopant profiles in Si and compound semiconductors
Measurement of impurities in semiconductor films, metal films
Measurement of inorganic and organic surface contaminants
Mapping impurity distributions in deposited metals
Typical data:
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