Degrees:

• Ph.D., Experimental Condensed Matter Physics, University of Illinois at Urbana-Champaign, 1987

Areas of research:

• Nanoelectronics
• Nanobiotechnology

Research description:

Nanoscale design and fabrication of advanced electronic, optoelectronic, and optical single and multilayered ultrathin films and nanocoatings for integration in computer chips, biological sensors, microsystems, and energy devices. Development and application of thermal, plasma assisted, and plasma enhanced physical vapor deposition (PVD), chemical vapor deposition (CVD), and atomic layer deposition (ALD) techniques for advanced electronic, optoelectronic, and optical single and multilayered ultrathin films and nanocoatings. Atomic scale characterization by ion-, x-ray, and electron-based techniques, including SIMS, XPS, AES, SEM, TEM, AFM, STM, FIB-SEM, HR-TEM, RBS, and Nuclear Reaction Analysis.

Selected publications:

A.E. Kaloyeros, J. Castracane, K. Dunn, E. Eisenbraun, A. Gadre, V. LaBella, T. Stoner, B. Xu, J. G. Ryan, and A. Topol, "Emerging Nanoscale Interconnect Processing Technologies: Fundamentals and Practice," Advanced Nanoscale ULSI Interconnects, ed. Y. Shacham-Diamand, T. Osaka, M. Datta, and T. Ohba, New York: Spring-Verlag 2009.

A.E. Kaloyeros, K.A. Dunn, A.T. Carlsen, A.W. Topol, "Carbon Nanotube Interconnects" Dekker Encyclopedia of Nanoscience and Nanotechnology, Second Edition, ed. J.A. Schwarz, C.I Contescu, and K. Putyera, New York: Taylor & Francis 2009. 

S. Gallis, V. Nikas, E. Eisenbraun, M. Huang, A. E. Kaloyeros, "On the Effects of Thermal Treatment on the Composition, Structure, Morphology and Optical Properties of Hydrogenated Amorphous Silicon-Oxycarbide", J. Mater. Res., Vol. 24, No. 8, p.2561, (2009).
 
V. Nikas, S. Gallis, M. Huang and A.E. Kaloyeros, "Influence of Carbon Content on Photoluminescence of Erbium-Doped Silicon Oxycarbide Thin Films", Mater. Res. Soc. Proc., Vol. 1111, 1111-D06-08 (2009).
 
N. Cady, A. Gadre, and A.E. Kaloyeros, "Nanobiological Sensor Technologies," Dekker Encyclopedia of Nanoscience and Nanotechnology, Second Edition, ed. J.A. Schwarz, C.I Contescu, and K. Putyera, New York: Taylor & Francis 2009.
 
S. Oktyabrasky and A.E. Kaloyeros, "Atomic scale Engineering of Self-Assembled Quantum Dots," Dekker Encyclopedia of Nanoscience and Nanotechnology, Second Edition, ed. J.A. Schwarz, C.I Contescu, and K. Putyera, New York: Taylor & Francis 2009.
 
S. Gallis, V. Nikas, E. Eisenbraun, M. Huang, A. E. Kaloyeros, "A Comparative Study of a-SiCxOyHz thin Films Grown Via Chemical Vapor Deposition for Silicon Photonics", Proc. SPIE, Vol. 7039, 70390L (2008)
 
S. Gallis, V. Nikas, E. Eisenbraun, M. Huang, A. E. Kaloyeros, "Strong Photoluminescence at 1540 nm from Er-doped Amorphous Silicon Oxycarbide: a Novel Silicon Material for Photonic Applications", Spyros Gallis, Vasileios Nikas, Himani Suhag, Mengbing Huang and Alain Kaloyeros, Proc. SPIE, Vol. 7030, 703004 (2008) 

A.E. Kaloyeros, M.R. Stan, Jr., R. Geer, E. T. Eisenbraun, J. Hartley, J. Raynolds, A. Gadre, and J. Ryan, "Conformational Molecular Switches for Post-CMOS Nanoelectronics," accepted for publication in the IEEE Transactions on Circuits and Systems I 54 (2007) 2345.

S. Gallis, V. Nikas, M. Huang, E. Eisenbraun, and A.E. Kaloyeros, "Comparative Study of the Effects of Thermal Treatment on the Optical Properties of Hydrogenated Amorphous Silicon-Oxycarbide," J. Appl. Phys. 102 (2007) 024302.

F. Papadatos, S. Consiglio, S. Skordas, E.T. Eisenbraun, and A.E. Kaloyeros, "A Study of Ruthenium Ultrathin Film Nucleation on Pre-treated SiO2 and Hf Silicate Dielectric Surfaces," J. Mater. Res.  22 (2007) 2254.

S. Gallis, M. Huang, and A.E. Kaloyeros, "Efficient Energy Transfer from Silicon Oxycarbide Matrix to Er Ions Via Indirect Excitation Mechanisms," Appl. Phys. Lett. 90 (2007) 161914.

Y. Zhu, K.A. Dunn, and A.E. Kaloyeros, "Properties of Ultra-thin Platinum Deposited by Atomic Layer Deposition for Nanoscale Copper Metallization Schemes," J. Mater. Res. 22 (2007) 1292.

S. Consiglio, F. Papadatos, S. Naczas, S. Skordas, E.T. Eisenbraun, and A.E. Kaloyeros, "Metalorganic Chemical Vapor Deposition of Hafnium Silicate Thin Films Using a Dual Source Dimethyl-alkylamido Approach," J. Electrochem. Soc. 153 (2006) F249.

O. van der Straten, Y. Zhu, J. Rullan, K. Dunn, and A.E. Kaloyeros, "Study of Copper-Refractory Metal Interfaces Via Solid-State Wetting for Emerging Nanoscale Interconnect Applications," J. of Mater. Res. 21[1] (2006) 255.

Y. Zhu, K.A. Dunn, and A.E. Kaloyeros, "Platinum Liner Deposited by Atomic Layer Deposition for Nanoscale Copper Interconnect Applications," ECS Transactions 1, Atomic Layer Deposition (2006) 63.

A.E. Kaloyeros, E.T. Eisenbraun, J. Welch, and R.E. Geer, "Molecular Interconnects. A Bottom-Up Paradigm for Signal Propagation Beyond Gigascale Integration," Semiconductor International (November 2005) 46.

G. Sirinakis, R. Siddique, K.A. Dunn, H. Efstathiadis, M.A. Carpenter, L. Sun, and AE. Kaloyeros, "Spectroellipsometric characterization of Y₂O₃-stabilized ZrO₂-Au nanocomposite films," J. Mater. Res. 20[12] (2005) 3320.

S. Gallis, E.E. Nyein, M. Huang, Uwe Hommerich, H. Efstathiadis, E. Eisenbraun, and A.E. Kaloyeros, "Photoluminescence in Er-Doped Amorphous SiC_xO_y Thin Films," Appl. Phys. Lett. 87[9] (2005) 091901.

A.E. Kaloyeros and S. Oktyabrsky, "Chip-Level Optical Interconnects. Prospects and Challenges,"Solid State Technology 48[6] (June 2005).

S. Skordas, F. Papadatos, S. Consiglio, E.T. Eisenbraun, E. Gousev, and A.E. Kaloyeros, "Electrical Properties of Al₂O₃ Ultrathin Films Grown by MOCVD for Advanced CMOS Gate Dielectric Applications," J. Mater. Res. 20[6] (2005) 1536.

134. G. Sirinakis, R. Siddique, M.A. Carpenter, and A.E. Kaloyeros, "Microstructure and Optical Properties of Y₂O₃-Stabilized ZrO₂-Au Nanocomposite Films," J. Mater. Res. 20[9] (2005) 2516.

Selected patents:

A.E. Kaloyeros and B. Arkles, "Method for Low Temperatrure Chemical Deposition of Tungsten Nitride, Tungsten Nitride Films, and Tungsten Nitride Barrier Layers for Computer and Interconnect Metallization," U.S. Patent Number 6,884,466 B2 (2005)

A.E. Kaloyeros, A. Knorr, and J. Fatermeier, "Methodology for In-situ Doping of Aluminum Coatings," U.S. Patent 6,534,133 (2003)

B. Arkles and A.E. Kaloyeros, "Silicon Based Films Formed from Iodosilane Precursors and Method for Making the Same," U.S. Patent 6,586,056 (2003)

A.E. Kaloyeros, A. Londergan, and B. Arkles, "Method for Interlayer Mediated Epitaxy of Cobalt Silicide from Low Temperature Chemical Vapor Deposition of Cobalt," U.S. Patent Number 6,346,477 (2002)

B. Arkles and A.E. Kaloyeros, "Tantalum and Tantalum-Based Films and Methods for Making the Same," U.S. Patent Number 5,919,531 (1999)

A.E. Kaloyeros, E.T. Eisenbraun, and B. Zheng, "Process and Apparatus for the Use of Solid Precursor Sources in Liquid Form for Vapor Deposition of Materials," U.S. Patent Number 5,376,409 (1994)

A.E. Kaloyeros and Barry Arkles,"Conformal Titanium-Based Films and Method for Their Preparation," U.S. Patent Number 6,090,709 (2000)

A.E. Kaloyeros and B. Arkles, "Method for The Chemical Vapor Deposition of Copper-Based Films and Copper Source Precursors for Making Same," U.S. Patent Number 6,066,196 (2000)

A. E. Kaloyeros and Barry Arkles, "Method for The Chemical Vapor Deposition of Copper-Based Films," U.S. Patent Number 6,037,001 (2000)

B. Arkles and A.E. Kaloyeros, "Tantalum and Tantalum-Based Films and Fluorine-Based Sources for Making Same," U.S. Patent 6,139,922 (2000)