Associate Professor of Nanoscience
Research areas: Rare-earth doped systems for photonic & optoelectronic applications, ion beam interactions with advanced materials
Contact:
Degrees:
- Ph.D., Physics, University of Western Ontario, Canada, 1997
Areas of research:
- Rare-earth doped systems for photonic and optoelectronic applications
- Ion beam interaction with advanced materials
Description of research:
Rare-earth doped systems for photonic and optoelectronic applications
The peculiar phenomena associated with the 4f electrons of rare earths form the basis of many solid-state devices (e.g., fiber lasers). Erbium doped systems have received particular attention, due to the intra-4f transition of Er3+ ions resulting in light emission at 1540 nm, the technologically important wavelength in silica-based fiber telecommunications.
Our primary goal is to develop advanced photonic and optoelectronic devices (e.g., planar waveguide amplifiers, Si light emitters and ultimately, Si lasers) from Er-doped Si-based materials for Silicon Photonics - a promising technology that would enable faster data transfer and high-speed computing through the construction of planar photonic circuits using standard Si CMOS techniques. Current efforts in the group focus on the effects of nanostructures (e.g., surface plasma and photonic crystals) and novel Si-based host materials (e.g., silicon oxycarbide) on Er optical activities, as well as the basic understanding of Er microstructures and excitation mechanisms in such systems. Work on light emitting devices and waveguide amplifiers based on such novel structures/materials is also underway.
Another goal is to combine rare-earth systems with nano-polymer/organic/DNA composites for realization of advanced photonic components ranging from waveguides, light emitters and lasers to optical switches, optical memory devices and fiber sensors. The group is currently interested in the development of efficient full-color light emitting devices and photon upconversion devices for applications related to solid-state lighting/display and biological detection.
Ion beam interaction with advanced materials
Ion beam techniques are widely used in materials research as an important means for materials characterization and modification. These techniques provide unique capability for us to obtain atomic information related to surface/interface structures and nanomaterials, as well as to achieve novel functionality in materials through ion beam induced structural modifications.
A major focus of the group is to explore the use of ion beams for modifying the optical, electrical and magnetic properties in materials, through defect engineering and impurity doping. Examples of such research are ion implantation induced magnetism in nanomaterials and silicon crystals, ion beam formed nanoparticles for carbon nanotube growth and ion irradiation effects on carbon nanotubes/polymers. Other activities include ion implantation in wide band gap semiconductor crystals for realizing p-type doping in ZnO or optical confinement in Al2O3. In addition, the group has initiated work to examine ion irradiation effects on DNA, with the aim to develop molecular understanding of heavy ion damage in DNA.
The group is also interested in applying ion channeling methods to understand lattice structures in various crystalline materials. These include self-assembled semiconductor quantum dot structures, semiconductor heterostructures and ion implanted semiconductors. These studies could provide valuable knowledge required for achieving atomic engineering in such advanced materials.
Publications, patents:
J. Zhu, S. Oktyabrsky and M.B. Huang
Ion channeling investigation of proton-irradiation-induced In-Ga atomic intermixing in self-assembled InAs/GaAs quantum dot structures
Journal of Applied Physics 100, 104312 (2006)
Ryan M. Roth, Djordje Djukie, Yoo Seung Lee, Richard M. Osgood, Jr., Sasha Bakhru, Bryan Laulicht, Kathy Dunn, Hassaram Bakhru, Liqi Wu and Mengbing Huang
Compositional and structural changes in LiNbO3 following deep He ion implantation for film exfoliation
Applied Physics Letters 89, 112906 (2006)
Ananta Adhikari, Mengbing Huang, Hassaram Bakhru, Robert Vajtai, Chang Ryu and Pulickel Ajayan
Stability of ion implanted single-walled carbon nanotubes - Thermogravimetric and Raman Analysis
Journal of Applied Physics 100, 064315 (2006)
X.T. Ren and M.B. Huang
Evolution of erbium lattice locations in silicon: Effects of thermal annealing and codoped impurities (carbon, nitrogen, oxygen, and fluorine)
Journal of Applied Physics 100, 023525 (2006)
C. Awo-Affouda, M. Bolduc, M.B. Huang, F. Ramos, K.A. Dunn, B. Thiel, G. Agnello and V.P. LaBella
Observation of crystallite formation in ferromagnetic Mn-implanted Si
Journal of Vacuum Science & Technology, A: Vacuum, Surfaces, and Films 24, 1644 (2006)
A.R. Adhikari, M.B. Huang, H. Bakhru, S. Talapatra, P.M. Ajayan and C.Y. Ryu
Effects of proton irradiation on thermal stability of single-walled carbon nanotubes mat
Nuclear Instruments & Methods in Physics Research B: Beam Interactions with Materials and Atoms 245, 431 (2006)
S. Talapatra, Ju-Yin Cheng, N. Chakrapani, S. Trasobares, A. Cao, R. Vajtai, M.B. Huang and P.M. Ajayan
Ion irradiation induced structural modifications in diamond nanoparticles
Nanotechnology 17, 305 (2006)
A.M. Zaitsev, A.A. Bergman, A.A. Gorokhovsky and Mengbing Huang
Diamond light emitting diode activated with Xe optical centers
Physica Status Solidi A: Applications and Materials Science 203, 638 (2006)
M. Bolduc, C. Awo-Affouda, A. Stollenwerk, M.B. Huang, F.G. Ramos and V.P. LaBella
Investigation of the structural properties of ferromagnetic Mn-implanted Si
Nuclear Instruments & Methods in Physics Research B: Beam Interactions with Materials and Atoms 242, 367 (2006)
Spyros Gallis, Mengbing Huang, Harry Efstathiadis, Eric Eisenbraun, Alain E. Kaloyeros, Ei Ei Nyein and Uwe Hommerich
Photoluminescence in erbium doped amorphous silicon oxycarbide thin films
Applied Physics Letters 87, 091901(2005)
S. Talapatra, P.G. Ganesan, T. Kim, R. Vajtai, M. Huang, M. Shima, G. Ramanath, D. Srivastava, S.C. Deevi and P.M. Ajayan
Irradiation-Induced Magnetism in Carbon Nanostructures
Physical Review Letters 95, 097201 (2005)
A.R. Adhikari, M.B. Huang, D. Wu, K. Dovidenko, B.Q. Wei, R. Vajtai and P.M. Ajayan
Ion-implantation-prepared catalyst nanoparticles for growth of carbon nanotubes
Applied Physics Letters 86, 053104 (2005)
M. Bolduc, C. Awo-Affouda, A. Stollenwerk, M.B. Huang, F.G. Ramos, G. Agnello and V.P. LaBella
Above room temperature ferromagnetism in Mn-ion implanted Si
Physical Review B 71, 033302 (2005)
Spyros Gallis, Harry Efstathiadis, Mengbing Huang, Ei Ei Nyein, Uwe Hommerich and Alain E. Kaloyeros
Photoluminescence at 1540 nm from erbium-doped amorphous silicon carbide films
Journal of Materials Research 19, 2389 (2004)
M.B. Huang, J. Zhu and S. Oktyabrsky
Enhanced radiation hardness of photoluminescence from InAs quantum dots embedded in an AlAs/GaAs superlattice structure
Nuclear Instruments & Methods in Physics Research B: Beam Interactions with Materials and Atoms 211, 505 (2003)
M.B. Huang and X.T. Ren
Evidence of oxygen stabilized hexagonal interstitial erbium in silicon
Physical Review B 68, 033203 (2003)
M.A. Morales-Paliza, M.B. Huang and L.C. Feldman
Nitrogen as background gas in pulsed-laser deposition growth of indium tin oxide films at room temperature
Thin Solid Films 429, 220 (2003)
M.B. Huang and X.T. Ren
Effects of carbon codoping on lattice locations of erbium in silicon
Applied Physics Letters 81, 2734 (2002)
M.B. Huang, J. Liu, G. Nuesca and R. Moore
Co-implantation of carbon and nitrogen into silicon dioxide for synthesis of carbon nitride materials
Nuclear Instruments and Methods in Physics Research B 196, 75 (2002)
X.T. Ren, M.B. Huang, S. Amadon, W.A. Lanford, M.A. Morales-Paliza and L.C. Feldman
Ion beam measurements of Sn/In ratios in indium tin oxide films prepared by pulsed laser deposition
Nuclear Instruments and Methods in Physics Research B 174, 187 (2001)
