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Jun Sung (Jay) Chun


Senior Lithography Engineer

jchun2@albany.edu

Professional Background:
  • Current : CNSE assignee to SEMATECH for EUV development
  • GlobalFoundries, Member of technical staff , BEOL process development engineer
  • SRI international, Member of technical staff, litho leader
  • Molecular imprint, Senior processs development engineer
  • LSI logic/Cypress/Vishay Siliconix, staff process development engineer
  • IDT, Senior process development engineer
  • Hyundai electronics, senior staff process development engineer
Education:
  • ME Polymer science and engineering, Korea
  • BE Material science and engineering, Korea

Responsibilities: 

As an assignee to SEMATECH for EUV developement , Mr. Chun is responsible for EUV process including outgassing issue, EUV material development, operation of EUV tool for customer support for EUV material.

Mr. Chun is the current key EUV lithography interface.

Mr. Chun has a full of creative idea and likes to read books and fishing with his family. 

Patents:

5 Granted USA Patents

37 Granted or pending patents ( Korea, Japan, China)

Technical Papers:

2006 Interface, Resolution enhancement photolithography process using WASOOM

2002 Journal of Photo polymer science and technology, Optimization of 193 nm contact hole resists for 100 nm Node

2002 Proc., SPIE, Illumination, acid diffusion, and process optimization considerations for 193 nm contact hole resists

2001 Proc. SPIE, Toward 0.1um contact hole process; resist flow technique III; Study of WASOOM, Top flare and etching characterization

2000 Proc. 37th Olin Interface, Sub-0.15umcontact hole process by using Water soluble Organic Over-coating Material (WASOOM); Resist flow technique(II)2000 Proc. SPIE, SiON as a Panacea? ; Study on process optimization, substrate dependency and delay time stability on various substrates

2000 Proc. SPIE, Contact hole size reducing methods by using water soluble material(WASOOM) as a barrier layer toward 0.15um contact hole; Resist flow technique I;

1999 Proc. SPIE, Effect of mask critical dimension error for sub quarter-micron contact hole

1999 Proc. SPIE, Novel Hardening Methods of DUV Chemically amplified photo resist by ion implantation and its application to new organic ARC material and bilayer process

1997 Journal of Photo polymer science and technology, Invited Paper : Novel approaches to reduce substrate dependancy of DUV chemically amplified photoresist

1996 JJAP 57th fall meeting, Study on thermal process of chemically amplified resist

1996 Proc. SPIE, Study on reduction of Substrate dependancy of chemically amplified photoresist

1995 Proc. SPIE, Implementation of I-line lithography to 0.3um design rul