About Us > Faculty & Staff > Faculty > Richard Matyi

Professor of Nanoscience

Watch Professor Matyi's "Inside CNSE" video interview on the capabilities of high-resolution X-ray diffraction

Degrees:

• Ph.D., Materials Science and Engineering, Northwestern University (1983)
• S.M., Polymerics, Massachusetts Institute of Technology (1976)
• B.S., Materials Science and Engineering, Northwestern University (1975)

Professional Background:

• Physicist, National Institute of Standards and Technology, Gaithersburg, MD (2000 - 2004)
• Professor, Department of Materials Science and Engineering University of Wisconsin, Madison WI (1988 - 2000)
• Member of the Technical Staff, Materials Science Laboratory, Texas Instruments, Inc., Dallas, TX (1982 - 1988)
• Development Specialist, Northern Petrochemical Co., Morris, IL (1976 - 1978)

Areas of Research:

• Theory and application of high resolution X-ray diffractometry and reflectometry
• Materials modification by ion-beam processing and plasma-source ion implantation
• Molecular beam epitaxy growth of semiconductor materials and device structures

Research summary:

Professor Matyi's research centers on the fabrication of nanostructures from various materials (primarily elemental and compound semiconductors) and their characterization with X-ray probes, particularly high resolution X-ray diffractometry and reflectometry. While this work occasionally has impact in unexpected areas (for instance, the analysis of damage and grown-in defects in protein crystals), it is directed primarily at the development of advanced X-ray analytical methods for problems that are of importance to the semiconductor industry. These include the study of materials ranging from highly perfect semiconductors single crystals to gate dialectics, metallizations and diffusion barriers.

The availability of advanced X-ray analytical techniques also permits the study of fundamental materials problems in nanostructured solids. Areas of current interest include the development of strain in lattice-mismatched materials, the evolution of structural damage in ion-implanted solids, and the characterization of materials processing methods by surface-sensitive X-ray scattering.

Professor Matyi's research has also involved the use of molecular beam epitaxy (MBE) for the growth of advanced materials and device structures. This work led to the fabrication of the first three terminal device based on resonant tunneling; the first controllable three dimensional "quantum dot" (in 1988, before the term "nanotechnology" became part of popular culture) in an epitaxially grown heterostructure; and the first demonstration of the integration of silicon and GaAs materials and device technologies into a single integrated circuit.

He is the author or co-author of more than 130 scientific publications (including 3 book chapters) and holds 3 U.S. patents.

Selected publications:

Matyi, R.J.
High Resolution X-ray Scattering Methods For ULSI Materials Characterization
Characterization and Metrology for USLI Technology 2003 (AIP Conference Pro-ceedings), 683, 634 (2003)

Volz, H.M. and Matyi, R.J.
A High Resolution Triple Axis X-ray Diffraction Analysis of Radiation Damage in Lysozyme Crystals
J. Cryst. Growth, 232, 502 (2001)

Matyi, R.J., Doolittle, W.A. and Brown, A.S.
High Resolution X-ray Diffraction Analysis of GaN/LiGaO2
J. Phys. D, 32, 61 (1999)

Booske, J.H., Matyi, R.J. and Conrad, J.R.
Plasma Implantation
Encyclopedia of Electri-cal and Electronics Engineering, 16, 520 (1999)

Matyi, R.J.
Growth of Quantum Confined Structures by Molecular Beam Epitaxy
VLSI Electronics Microstructure Science (eds. N.G. Einspruch and W.R. Frensley), 25 (1994)

Wang, V.S.; Matyi, R.J.; and Nordheden, K.J.
Triple Crystal X-ray Diffraction Analysis of Reactive Ion Etched GaAs
J. Appl. Phys., 75, 3835 (1994)

Matyi, R.J.; Melloch, M.R. and Woodall, J.M.
Structural Analysis of As-Deposited and Annealed Low-Temperature Gallium Arsenide
J. Cryst. Growth, 129,719 (1993)

Reed, M.A.; Frensley, W.R.; Bate, R.T.; Matyi, R.J.; Randall, R.J.; Seabaugh, A.C.; and Yang, C.H.
Realization of a Three Terminal Resonant Tunneling Device: The Bipolar Quantum Resonant Tunneling Transistor (BiQuaRTT)
Appl. Phys. Lett., 54, 1034 (1989)

Shichijo, H.; Matyi, R.J.; and Taddiken, A.H.
Co-Integration of GaAs MESFET and Si CMOS Circuits
IEEE Elect. Dev. Lett., 9, 444 (1988)

Reed, M.A.; Randall, J.N.; Aggarwal, R.J.; Matyi, R.J.; Moore, T.M.; and Wetsel, A.E.
Observation of Discrete Electronic States in a Zero-Dimensional Semiconductor Nanostructure
Phys. Rev. Lett., 60, 535 (1988)

Patents:

Matyi, R.J. and Shichijo, H.
Heteroepitaxial Selective-Area Growth Through Insulator Windows
U.S. Patent No. 4,914,053 (issued April 3, 1990)

Shichijo, H. and Matyi, R.J.
Method of Forming an Epitaxial Layer on a Heterointerface
U.S. Patent No. 5,238,869 (issued August 24, 1993; co-issued by the European Patent Office as EP0352472 and the Japan Patent Office as JP2161718)

Shichijo, H. and Matyi, R.J.
Epitaxial layer on a heterointerface
U.S. Patent No. 5,959,308 (issued September 28, 1999)