About Us > Faculty & Staff > Faculty > Eric Eisenbraun

Associate Professor of Nanoscience

Degrees:

• Ph.D., Physics, University at Albany, 1995
• B.S., Physics, RPI

Areas of research:

• thin films
• ALD
• CVD
• metallization
• barriers
• interconnects
• gate stack
• metals

Research Description:

Professor Eisenbraun's research groups focus in several primary areas. The first is researching new materials and processes for use in CMOS transistor gate stacks. This involves developing high performance high-k dielectric materials as well as metallic gate electrode materials.

The second area is advanced interconnects. This includes developing refractory metal-based barrier/adhesion layers such as TiSiN and HfN for copper metallization, and researching how these layers can be integrated with cutting edge porous low-k dielectric interlayer dielectric materials.

The third area involves the development processes for the growth of refractory metal-based materials such as TaN and SiCN for use as corrosion resistant and wear-resistant coatings. These have a broad range of particular applications.

The fourth area is researching very novel materials for very advanced interconnect and device applications. This includes working jointly with other researchers to develop bioengineered protein-based molecular systems for use as nanoscale interconnect and device applications.

Recent Publications and Presentations:

B. Arkles, Y. Pan, Y. Kim, E. Eisenbraun, C. Miller and A. Kaloyeros, “Hydridosilane Modification of Metals: An Exploratory Study”, J. Adhesion Sci. and Tech., 25 (12), 1 (2011).

J. Lee, I. Lund, E. Eisenbraun and R. Geer, “Silicide-induced Multi-wall Carbon Nanotube Growth on Silicon Nanowires”, Nanotechnology, 22 (8), 085603 (2011).

N. Rana , C. Kossow , E. Eisenbraun , R. Geer and A. Kaloyeros, “Controlling Interfacial Adhesion of Self-Assembled Polypeptide Fibrils for Novel Nanoelectromechanical System (NEMS) Applications”, Micromachines, 2(1), 1 (2011).

E. Eisenbraun, F.-J. Kahlen, P. Werbaneth, and V. Pandit, “Guest Editorial Special Section on the Advanced Semiconductor Manufacturing Conference”, IEEE Transactions on Semiconductor Manufacturing, 24 (2), 5725196, 137-138 (2011).

J. Mao, E. Eisenbraun, V. Omarjee, C. Lansalot, C. Dussarrat, “Low Temperature Copper Deposition by PE-ALD”, Materials Research Society Symposium Proceedings 1195, 305-310 (2010).

R. Phillips and E. Eisenbraun, “A Comparison of O3 and H2O as Oxygen Sources for Atomic Layer Deposition Processing of HfAlOx Thin Films for High k Dielectric Nanocapacitor Applications”, in Dielectrics for Nanosystems 4: Materials Science, Processing, Reliability, and Manufacturing, Proceedings of the 217th Meeting of the Electrochemical Society (Vancouver, Canada, 2010).

R. Phillips and E. Eisenbraun, “A Comparison of O3 and H2O as Oxygen Sources for Atomic Layer Deposition Processing of HfAlOx Thin Films for High-k Dielectric Nanocapacitor Applications”, ECS Trans., 28 (2), 97 (2010).

N. Fahrenkopf, S. Oktyabrsky, E. Eisenbraun, M. Bergkvist, H. Shi, N. Cady, “Phosphate-Dependent DNA Immobilization on Hafnium Oxide for Bio-Sensing Applications”, Materials Research Society Symposium Proceedings 1191, pp. 141-146 (2009).

J. Mao, E. Eisenbraun, V. Omarjee, C. Lansalot and C. Dussarrat, “Low Temperature Hydrogen Plasma Cu Atomic Layer Deposition Process Development”, Proceedings of the Fall 2009 Meeting of the Materials Research Society (Boston, MA, 2009).

T. Chakraborty and E. Eisenbraun, “Development of ALD-Based Multicomponent Liners as Direct-Plate Barriers in Copper Metallization”, Proceedings of the Semiconductor Research Corporation (SRC) TECHCON Student Symposium 2009 (Austin, TX, 2009).

D. Greenslit and E. Eisenbraun, “Modifications to WCN Films to Improve Performance for Direct Plate Applications”, Proceedings of the Semiconductor Research Corporation (SRC) TECHCON Student Symposium 2009 (Austin, TX, 2009).

A.E. Kaloyeros, J. Castracane, K. Dunn, E. Eisenbraun, A. Gadre, V. LaBella, T. Stoner, B. Xu, J. G. Ryan, and A. Topol, "Emerging Nanoscale Interconnect Processing Technologies: Fundamentals and Practice," in Advanced Nanoscale ULSI Interconnects, ed. Y. Shacham-Diamand, T. Osaka, M. Datta, and T. Ohba, New York: Spring-Verlag (2009).

"Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications" D. Greenslit, T. Chakraborty, and E. Eisenbraun, J. Vac. Sci. Technol. B, 27(2), 631 (2009).

"Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications" S. Kumar, D. Greenslit, T. Chakraborty, and E. Eisenbraun, J. Vac. Sci. Technol. A 27(3), 572 (2009).

"Investigations of Ultrathin Ru-WCN Mixed Phase Films for Diffusion Barrier and Copper Direct-Plate Applications", D. Greenslit, S. Kumar, T. Chakraborty, and E. Eisenbraun, ECS Trans. 13, 63 (2008).

"On the effects of thermal treatment on the composition, structure, morphology, and optical properties of hydrogenated amorphous silicon-oxycarbide", S. Gallis, V.Nikas, E. Eisenbraun, M. Huang, and A. Kaloyeros, J. Mater. Res., 24(8) (2009)

"Humidity Effects on Pd/Au-based All-Optical Hydrogen Sensors," Z. Zhao, M. Knight, S. Kumar, E. T. Eisenbraun, and M. A. Carpenter, 129(2), 726-733 (2008)

"Plasma Assisted ALD of Conductive Hafnium Nitride using Tetrakis(ethylmethylamido) hafnium for CMOS Gate Electrode Applications," S. Consiglio, W. Zeng, N. Berliner, and E. Eisenbraun, J. Electrochem. Soc. 155(3), H196-H201 (2008)

"Comparative Study of the Effects of Thermal Treatment on the Optical Properties of Hydrogenated Amorphous Silicon-Oxycarbide," S. Gallis, V. Nikas, M. Huang, E. Eisenbraun, and A. Kaloyeros, J. Appl. Phys. 102, 024302-024310 (2007)

"Conformational Molecular Switches for Post-CMOS Nanoelectronics," A. Kaloyeros, M. Stan, R. Geer, E. Eisenbraun, J. Raynolds, A. Gadre, and J. Ryan, IEEE Trans. Circuits and Systems I: Nanoelectronic Circuits and Nanoarchitectures, 54(11), 2345-2352 (2007). Invited.

"Development of Manufacturable Solutions for the Direct Plating of Copper on Robust ALD-Grown Barriers," S. Kumar, D. Greenslit, and E. Eisenbraun, ECS Trans. 6(8), 77-88 (2007)

"Hydrogen Plasma-enhanced Atomic Layer Deposition of Copper Thin Films," L. Wu and E. Eisenbraun, J. Vac. Sci. Technol. B(25), 2581-2585 (2007)

"Integration of Electrochemically Deposited Cu with Plasma Enhanced Atomic Layer Deposition-Grown Cu Seed Layers," L. Wu, W. Zeng, and E. Eisenbraun, ECS Trans. 11(7), 67-78 (2007)

"Low Temperature PEALD Growth of WNxCy from a Novel Precursor for Barrier Applications in Nanoscale Devicees," W. Zeng, X. Wang, S. Kumar, D. Peters, and E. Eisenbraun, J. Mater. Res., 22(3), 79 (2007)

"A Study of Ruthenium Ultrathin Film Nucleation on Pre-treated SiO2 and Hf-silicate Dielectric Surfaces," F. Papadatos, S. Consiglio, S. Skordas, E. Eisenbraun, and A. Kaloyeros, J. Mater. Res., 22(8), 2254-2264 (2007)

"Sub-0.25 Micron Silicon via Etching for 3D Interconnects," X. Wang, W. Zeng and E. Eisenbraun J. Micromech. Microeng. 17 804 (2007)

"ALD: Emerging Materials, Processes, and Nanoscale Technology Applications," E. Eisenbraun, M. Carpenter, R. Siddique, S. Naczas, W. Zeng, F. Luo, and A. Kaloyeros, Electrochem. Soc. Trans. 1(10), 29-36 (2006). Invited.

"Materials and Processes for High k Gate Stacks: Results from the FEP Transition Center," C. Osburn, S. Campbell, A. Demkov, E. Eisenbraun, E. Garfunkel, T. Gustafsson, A. Kingon, J. Lee, D. Lichtenwalner, G. Lucovsky, T.P. Ma, J. Maria, V. Misra, R. Nemanich, G. Parsons, D. Schlom, S. Stemmer, R. Wallace, and J. Whitten, Electrochem. Soc. Trans. 3(3), 389-398 (2006). Invited.

"Atomic Layer Deposition Approaches for the Growth of Ta-based Materials for Advanced CMOS Gate Electrode Applications," S. Consiglio and E. Eisenbraun, Proceedings of the Semiconductor Research Corporation (SRC) TECHCON Student Symposium 2006, October 2006

"Growth of Novel Alloys for Direct-Plate Copper Barrier Applications," S. Kumar, M. Tungare, and E. Eisenbraun, Proceedings of the Semiconductor Research Corporation (SRC) 2006 TECHCON Student Symposium 2006, October 2006

"Thermal/Chemical Stability of ALD Ru-TaN Thin Films for Gate Electrode Applications," M.Tungare, S. Kumar, and E. Eisenbraun, Electrochem. Soc. Trans. 3(2), 303 (2006)

"Metalorganic Chemical Vapor Deposition of Hafnium Silicate Thin Films Using a Dual Source Dimethyl-alkylamido Approach," S. Consiglio, F. Papadatos, S. Naczas, S. Skordas, E. Eisenbraun, and A. Kaloyeros, J. Electrochem. Soc. 153, F249 (2006)

"Low Temperature ALD MoN for Applications in Nanoscale Devices," W. Zeng, X. Wang, S. Meiere, and E. Eisenbraun, Electrochem. Soc. Trans. 1(11) 163 (2006)

"Bilayer Fibril Formation by Genetically Engineered Polypeptides: Preparation and Characterization," N. Topilina, S. Higashiya, N. Rana, V. Ermolenkov, C. Kossow, A. Carlsen, S. Ngo, C. Wells, E. Eisenbraun, K. Dunn, I. Lednev, R. Geer, A. Kaloyeros, J. Welch, Biomacromolecules 7(4), 1104 (2006)

"Commercialization of Emerging Nanoscale Processing and Characterization Hardware: Innovations and Challenges," E. Eisenbraun, Nanotechnology Law and Business Vol. 2, Issue 2 (2005). Invited.

"Electrical Properties of Ultra Thin Al2O3 Films Grown by MOCVD for Advanced CMOS Gate Dielectric Applications," S. Skordas, F. Papadatos, S. Consiglio, E. Eisenbraun, E. Gousev, and A. Kaloyeros, J. Mater. Res. 20, 1536 (2005)

"Erbium-doped amorphous- Si-C-O matrix (a-SiCxOy:Er) - A Novel Silicon-based Material for Near-infrared Optoelectronic Applications," S. Gallis, M. Huang, V. Nikas, H. Efstathiadis, E. Eisenbraun, A. Kaloyeros, E. Nyein, and U. Hommerich, Mater. Res. Soc. Symp. Proc. Vol. 866 V6.5.1, 2005

"Photoluminescence in Erbium Doped Amorphous Silicon Oxycarbide Thin Films," S. Gallis, M. Huang, H. Efstathiadis, E. Eisenbraun, A. Kaloyeros, E. Nyein, and U. Hommerich , Appl. Phys. Lett. 87, 091901 (2005)

"Chemical Vapor Deposition of Ruthenium and Its Oxide for Emerging Gate Electrode Applications," F. Papadatos, S. Consiglio, S. Skordas, E. Eisenbraun, A. Kaloyeros, J. Peck, D. Thompson, and C. Hoover, J. Mater. Res. 19, 2947 (2004)

"CVD of Tantalum Oxide Dielectric Thin Films for Nanoscale Device Applications," W. Zeng, E. Eisenbraun, H. Frisch, J. Sullivan, A. Kaloyeros, J. Margalit, and K. Beck, J. Electrochem. Soc. 151, F172 (2004)

"Advanced Ruthenium Precursors for Thin Film Deposition," C. Hoover, M. Litwin, J. Peck, G. Piotrowski, D. Thompson, E. Eisenbraun, and F. Papadatos, Proc. Electrochem. Soc., 2003-22 (Physics and Technology of High-k Gate Dielectrics II), 237 (2004)

"Atomic Layer Deposition of Tantalum Nitride For Ultrathin Liner Applications in Advanced Copper Metallization Schemes," O. van der Straten, Y. Zhu, K. Dunn, E. Eisenbraun, and A. Kaloyeros, J. Mater. Res. 19, 447 (2004)

"Low Temperature Metal Organic Chemical Vapor Deposition of Al2O3 for advanced CMOS gate dielectric applications," S. Skordas, F. Papadatos, G. Nuesca, J. Sullivan, E. Eisenbraun, and A. Kaloyeros, J. Mater. Res. 18, 868 (2003)

"The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum-Based Thin Films for Copper Diffusion Barrier Applications," D. Cheng and E. Eisenbraun, Mat. Res. Soc. Symp. Proc. Vol. 766, E10.4.1, 2003

"Effect of Plasma Pre-Treatment on Dewetting Properties of CVD Cu on CVD W2N Barrier Layer," D. Cheng, G. Nuesca, and E. Eisenbraun, Mat. Res. Soc. Symp. Proc. Vol. 766, E3.9.1, 2003

"Characterization of Ruthenium and Ruthenium Oxide Thin Films Deposited by Chemical Vapor Deposition for CMOS Gate Electrode Applications," F. Papadatos, S. Skordas, S. Consiglio, E. Eisenbraun, and A. Kaloyeros, Mat. Res. Soc. Symp. Proc. Vol. 745, P. 61 (2003)

"Interface Quality and Electrical Performance of Low-Temperature Metalorganic Chemical Vapor Deposition Aluminum Oxide Thin Films For Advanced CMOS Gate Dielectric Applications," S. Skordas, F. Papadatos, S. Consiglio, E. Eisenbraun, and A. Kaloyeros, Novel Materials and Processes for Advanced CMOS, Mat. Res. Soc. Proc. Vol. 745, N5.18.1, 2003

"Characterization of Ruthenium and Ruthenium Oxide Thin Films deposited by Chemical Vapor Deposition for CMOS Gate Electrode Applications," F. Papadatos, S. Skordas, S. Consiglio, A. Kaloyeros, and E. Eisenbraun, Mat. Res. Soc. Symp. Proc. Vol. 745, N3.3.1, 2003

"3D System-on-a-Chip using Dielectric Glue Bonding and Cu Damascene Inter-Wafer Interconnects," J.-Q. Lu, A. Jindal, Y. Kwon, J. McMahon, K. Lee, R. Kraft, B. Altemus, D. Cheng, E. Eisenbraun, T. Cale, and R. Gutmann, in International Symposium on Thin Film Materials, Processes, and Reliability at the 203rd Meeting of The Electrochemical Society, Paris, (2003)

"Wafer-Scale High-Density Multifunctional Integration (HDMI) for Low-Cost Micro/Nano/Electro-Opto/Bio Heterogeneous Systems," R. Gutmann, J.-Q. Lu, J. McMahon, P.D. Persans, T.S. Cale, E. Eisenbraun, J. Castracane and A.E. Kaloyeros, in Proceedings of Nanotech 2003: The Nanotechnology Conference and Trade Show, Eds. M. Laudon and B. Romanowicz, 1, 530, San Francisco (2003)

"Integration studies of MOCVD-grown Ru and RuO2 with HfO2-based dielectrics for advanced CMOS applications," F. Papadatos, S. Consiglio, A. Kaloyeros, and E. Eisenbraun, Proceedings of the Semiconductor Research Corporation (SRC) 2003 TECHCON Student Symposium 2003, August 2003

"Atomic Layer Deposition Processes for Nanoscale Copper Metallization," O. van der Straten, Y. Zhu, E. Eisenbraun, and A. Kaloyeros, in Proceedings of the 2002 Advanced Metallization Conference (Mater. Res. Soc., 2002)

"Optimization of Ultrathin ALD Tantalum Nitride Films for Zero-Thickness Liner Applications," O. van der Straten, Y. Zhu, E. Eisenbraun, and A. Kaloyeros, Mat. Res. Soc. Symp. Proc. Vol. 716, B11.3.1, 2002

"Chemical Vapor Deposition of Ru and RuO2 for Gate Electrode applications," F. Papadatos, S. Skordas, Z. Patel, S. Consiglio, and E. Eisenbraun, Mater. Res. Soc. Symp. Proc., Vol. 716, B2.4.1, 2002

"Low temperature metal organic chemical vapor deposition of aluminum oxide thin films for advanced CMOS gate dielectric applications," S. Skordas, F Papadatos, Z. Patel, G. Nuesca, E. Eisenbraun, E. Gusev, and A. E. Kaloyeros, Mater. Res. Soc. Symp. Proc., Vol. 716, B4.11.1, 2002

"Physical Properties and Diffusion Caracteristics of CVD-Grown TiSiN Films," D. Anjum, K. Dovidenko, S. Oktyabrsky, E. Eisenbraun, and A. Kaloyeros, Mat. Res. Soc. Symp. Proc. Vol. 697, P8.18.1, 2002

"Chemical Vapor Deposition of novel precursors for advanced Capacitor electrodes," John Peck, Cynthia A. Hoover, Jim D. Atwood, Dave Hoth, Steven Consiglio, Filippos Papadatos, Eric Eisenbraun, Electrochem. Soc. Proc. Vol. 2002-11, 2002

"Investigations of Substrate-Selective Covalent Attachment for Genetically-Engineered Molecular Interconnects," N. Rana, K. Bousman, G. S. Shekhawat, G. Sirinakis, F. Heuchling, J. Welch, E. Eisenbraun, R. Geer, and A. Kaloyeros, Mat. Res. Soc. Symp. Proc. Vol. 728, S8.4.1 (2002)

"Processing of Inter-Wafer Vertical Interconnects in 3D ICs," J.-Q. Lu, K. Lee, Y. Kwon, G. Rajagopalan, J. McMahon, B. Altemus, M. Gupta, E. Eisenbraun, B. Xu, A. Jindal, R. Kraft, J. McDonald, J. Castracane, T. Cale, A. Kaloyeros, and R. Gutmann, in Advanced Metallization Conference 2002, Eds. B.M. Melnick, T.S. Cale, S. Zaima, and T. Ohta, 18, 45, The Materials Research Society (2002)

"Molecular Interconnects: Exploiting Nanotechnology For Terahertz Interconnects," A. Kaloyeros, E. Eisenbraun, J. Welch, and R. Geer, Semiconductor International (April, 2002)

"High-Density Multifunctional Integration Schemes," J.-Q. Lu, Y. Kwon, G. Rajagopalan, M. Gupta, J. McMahon, K. Lee, R. Kraft, J. McDonald, T. Cale, R. Gutmann, B. Xu, E. Eisenbraun, J. Castracane, and A. Kaloyeros, in Proceedings of 2002 IEEE International Interconnect Technology Conference (IITC), 78, (2002)

"Thermal and electrical barrier performance testing of ultrathin atomic layer deposition tantalum-based materials for nanoscale copper metallization," O. van der Straten, Y. Zhu, E. Eisenbraun, A. Kaloyeros, in Proceedings of 2002 IEEE International Interconnect Technology Conference (IITC), 188, (2002)